Signal formation in a-Si:H particle detectors

Author

Hamel, L.A. ; Dubeau, Jacques ; Pochet, T. ; Equer, B.

Author_Institution

Lab. de Phys. Nucl. et Groupe des Couches Minces, Montreal Univ., Que., Canada

Volume

38

Issue

2

fYear

1991

fDate

4/1/1991 12:00:00 AM

Firstpage

251

Lastpage

254

Abstract

The response of a hydrogenated amorphous silicon thin film p-i-n diode to protons is presented as a function of the applied bias. A typical pulse shape is also presented. These data are explained on the basis of a model whose main features are fast (<5 ns) electron collection and slow (a few microseconds) hole collection due to multiple trapping transport through the shallow gap states. The overall charge normalization yields a mean pair creation energy ∈_p of 3.4-4.4 eV, comparable to 3.63 eV in crystalline silicon despite the larger 1.7-eV gap. To explain this result, a microscopic Monte Carlo calculation, taking into account the actual density of states in a-Si:H, is used to study the energy sharing between ionization and phonon production during hot carrier thermalization. This simulation yields a value of 4.3 eV for ∈_p

Keywords

Monte Carlo methods; nuclear electronics; p-i-n diodes; proton detection and measurement; semiconductor counters; Si:H; a-Si:H particle detectors; applied bias; charge normalization; crystalline; density of states; electron collection; energy sharing; hole collection; hot carrier thermalization; ionization; mean pair creation energy; microscopic Monte Carlo calculation; multiple trapping transport; phonon production; protons; pulse shape; shallow gap states; thin film p-i-n diode; Amorphous silicon; Charge carrier processes; Crystallization; Electron traps; P-i-n diodes; Protons; Pulse shaping methods; Radiation detectors; Semiconductor thin films; Shape;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.289305

Filename

289305