Title :
Tests of the radiation hardness of VLSI integrated circuits and silicon strip detectors for the SSC under neutron, proton, and gamma irradiation
Author :
Ziock, H.J. ; Milner, C. ; Sommer, W.F. ; Cartiglia, N. ; DeWitt, J. ; Dorfan, D. ; Hubbard, B. ; Leslie, J. ; O´Shaughnessy, K.F. ; Pitzl, D. ; Rowe, W.A. ; Sadrozinski, H.F.-W. ; Seiden, A. ; Spencer, E. ; Tennenbaum, P. ; Ellison, J. ; Jerger, S. ; Lie
Author_Institution :
Los Alamos Nat. Lab., NM, USA
fDate :
4/1/1991 12:00:00 AM
Abstract :
As part of a program to develop a silicon strip central tracking detector system for the Superconducting Super Collider (SSC), the effects of radiation damage in silicon detectors and their associated front-end readout electronics are being studied. The authors report on the results of neutron and proton irradiations at the Los Alamos National Laboratory and γ-ray irradiations at UC Santa Cruz. Individual components on single-sided AC-coupled silicon strip detectors and on test structures were tested. Circuits fabricated in a radiation-hard CMOS process and individual transistors fabricated using dielectric isolation bipolar technology were also studied. Bulk damage to the silicon itself is seen as the limiting factor in the lifetime of a detector system. In particular, it is the acceptor site creation in the active volume of the silicon detector that will limit the lifetime to approximately 10 yr for the innermost detectors
Keywords :
VLSI; elemental semiconductors; gamma-ray effects; neutron effects; nuclear electronics; position sensitive particle detectors; proton accelerators; proton effects; radiation hardening (electronics); semiconductor counters; silicon; storage rings; synchrotrons; Los Alamos National Laboratory; SSC; Si detector; Superconducting Super Collider; UC Santa Cruz; VLSI integrated circuits; acceptor site creation; active volume; central tracking detector system; dielectric isolation bipolar technology; front-end readout electronics; gamma irradiation; limiting factor; neutron; proton; radiation damage; radiation hardness; radiation-hard CMOS process; single-sided AC-coupled; strip detectors; test structures; transistors; Circuit testing; Integrated circuit testing; Neutrons; Protons; Radiation detectors; Readout electronics; Silicon radiation detectors; Strips; Superconducting integrated circuits; Very large scale integration;
Journal_Title :
Nuclear Science, IEEE Transactions on
