• DocumentCode
    1096359
  • Title

    The problem of correlating Schottky-diode barrier height with an ideality factor using I-V measurements

  • Author

    Verret, D.P.

  • Author_Institution
    Texas Instruments, Inc., Houston, TX
  • Volume
    5
  • Issue
    5
  • fYear
    1984
  • fDate
    5/1/1984 12:00:00 AM
  • Firstpage
    142
  • Lastpage
    144
  • Abstract
    Critical analysis is made of a recently proposed method of determining the relationship between the ideality factor and the barrier height of Schottky barrier diodes (SBD´s) from I-V measurements. It is demonstrated that, while this method may produce consistent results in situations where a stable reproducible manufacturing process exists, the flat-band barrier height so determined cannot be taken to be the true flat-band barrier height.
  • Keywords
    Anodes; Electrons; Manufacturing processes; Predictive models; Q measurement; Schottky barriers; Schottky diodes; Semiconductor diodes; Semiconductor-metal interfaces;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25863
  • Filename
    1484239