DocumentCode
1096359
Title
The problem of correlating Schottky-diode barrier height with an ideality factor using I-V measurements
Author
Verret, D.P.
Author_Institution
Texas Instruments, Inc., Houston, TX
Volume
5
Issue
5
fYear
1984
fDate
5/1/1984 12:00:00 AM
Firstpage
142
Lastpage
144
Abstract
Critical analysis is made of a recently proposed method of determining the relationship between the ideality factor and the barrier height of Schottky barrier diodes (SBD´s) from I-V measurements. It is demonstrated that, while this method may produce consistent results in situations where a stable reproducible manufacturing process exists, the flat-band barrier height so determined cannot be taken to be the true flat-band barrier height.
Keywords
Anodes; Electrons; Manufacturing processes; Predictive models; Q measurement; Schottky barriers; Schottky diodes; Semiconductor diodes; Semiconductor-metal interfaces;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1984.25863
Filename
1484239
Link To Document