Title :
The problem of correlating Schottky-diode barrier height with an ideality factor using I-V measurements
Author_Institution :
Texas Instruments, Inc., Houston, TX
fDate :
5/1/1984 12:00:00 AM
Abstract :
Critical analysis is made of a recently proposed method of determining the relationship between the ideality factor and the barrier height of Schottky barrier diodes (SBD´s) from I-V measurements. It is demonstrated that, while this method may produce consistent results in situations where a stable reproducible manufacturing process exists, the flat-band barrier height so determined cannot be taken to be the true flat-band barrier height.
Keywords :
Anodes; Electrons; Manufacturing processes; Predictive models; Q measurement; Schottky barriers; Schottky diodes; Semiconductor diodes; Semiconductor-metal interfaces;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.25863