Optimum flash lamp annealing conditions for fabrication of low dose ion-implanted Si solar cells

A method to fabricate silicon solar cells was developed around low dose (nonamorphized) ion implantation and Xe flash lamp annealing under assist heating (350-550°C). Solar cells fabricated by low dose¹¹B+ (p+/n-type cell) and³¹p+ (n+/p-type cell) implantation and flash lamp annealing showing a high efficiency of about 10.4 percent (AM2) without AR coating and BSF structures. The results were compared with those of high dose implanted cells reported by us previously (in this transaction). Effects of assist heating temperature were also examined.