• DocumentCode
    1096551
  • Title

    Optimum flash lamp annealing conditions for fabrication of low dose ion-implanted Si solar cells

  • Author

    Usami, A. ; Nishioka, H. ; Inoue, Y.

  • Author_Institution
    Nagoya Institute of Technology, Nagoya, Japan
  • Volume
    5
  • Issue
    6
  • fYear
    1984
  • fDate
    6/1/1984 12:00:00 AM
  • Firstpage
    186
  • Lastpage
    187
  • Abstract
    A method to fabricate silicon solar cells was developed around low dose (nonamorphized) ion implantation and Xe flash lamp annealing under assist heating (350-550°C). Solar cells fabricated by low dose11B+ (p+/n-type cell) and31p+ (n+/p-type cell) implantation and flash lamp annealing showing a high efficiency of about 10.4 percent (AM2) without AR coating and BSF structures. The results were compared with those of high dose implanted cells reported by us previously (in this transaction). Effects of assist heating temperature were also examined.
  • Keywords
    Annealing; Coatings; Fabrication; Ion implantation; Lamps; Photovoltaic cells; Silicon; Solar heating; Temperature; Thermal degradation;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25881
  • Filename
    1484257
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1096551