DocumentCode :
1096590
Title :
The pinch rectifier: A low-forward-drop high-speed power diode
Author :
Baliga, B.J.
Author_Institution :
General Electric Company Corporate Research and Development Center, Schenectady, NY
Volume :
5
Issue :
6
fYear :
1984
fDate :
6/1/1984 12:00:00 AM
Firstpage :
194
Lastpage :
196
Abstract :
A new concept for reducing the forward voltage drop of Schottky rectifiers without incurring excessive reverse leakage currents is introduced. In this concept, a junction grid is incorporated beneath the Schottky barrier to pinch off current flow during reverse blocking. Experimental results that demonstrate the capability to reduce the forward drop from 0.6 to 0.4 V without incurring an increase in leakage current are presented.
Keywords :
Current density; Electric breakdown; Implants; Leakage current; P-i-n diodes; Rectifiers; Schottky barriers; Schottky diodes; Semiconductor diodes; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1984.25884
Filename :
1484260
Link To Document :
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