Title :
The pinch rectifier: A low-forward-drop high-speed power diode
Author_Institution :
General Electric Company Corporate Research and Development Center, Schenectady, NY
fDate :
6/1/1984 12:00:00 AM
Abstract :
A new concept for reducing the forward voltage drop of Schottky rectifiers without incurring excessive reverse leakage currents is introduced. In this concept, a junction grid is incorporated beneath the Schottky barrier to pinch off current flow during reverse blocking. Experimental results that demonstrate the capability to reduce the forward drop from 0.6 to 0.4 V without incurring an increase in leakage current are presented.
Keywords :
Current density; Electric breakdown; Implants; Leakage current; P-i-n diodes; Rectifiers; Schottky barriers; Schottky diodes; Semiconductor diodes; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.25884