• DocumentCode
    1096616
  • Title

    Low-frequency diffusion noise in GaAs MESFET´s

  • Author

    Duh, K.H. ; Zhu, X.C. ; van der Ziel, A.

  • Author_Institution
    University of Minnesota, Minneapolis, MN
  • Volume
    5
  • Issue
    6
  • fYear
    1984
  • fDate
    6/1/1984 12:00:00 AM
  • Firstpage
    202
  • Lastpage
    204
  • Abstract
    We report here on low-frequency diffusion noise of GaAS MESFET´s. The Poole-Frenkel effect gives a shift of the corner frequency (f = D/πL2). From the measurements the activation energy of the diffusing ions is found to be 0.16 eV. At 77 K the diffusion noise is frozen out and the device has a 1/f spectrum.
  • Keywords
    Density estimation robust algorithm; Diffusion processes; Frequency; Gallium arsenide; Low-frequency noise; MESFETs; Noise generators; Noise measurement; Permittivity; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25887
  • Filename
    1484263
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1096616