The influence of light on the properties of NMOS Transistors in laser µ-zoned crystallized silicon layers

Isolated thin Si layers have been grown by laser µ-zone crystallization at high bias temperature. The influence of light on the properties of NMOS silicon gate transistors fabricated in these crystallized silicon layers is investigated. Both leakage current and threshold voltage are light sensitive. The influence of light on the threshold voltage results in a nearly logarithmic dependence of the drain current as a function of the light intensity.