Title :
High-frequency characteristics of AlGaAs/GaAs heterojunction bipolar transistors
Author :
Ito, H. ; Ishibashi, T. ; Sugeta, T.
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Kanagawa, Japan
fDate :
6/1/1984 12:00:00 AM
Abstract :
The fabrication and high-frequency performance of MBE-grown AlGaAs/GaAs heterojunction bipolar transistors (HBT´s) is described. The achieved gain-bandwidth product fTis 25 GHz for a collector current density Jcof 1 × 104A/cm2and a collector-emitter voltage VCEof 3 V.fTcontinues to increase with the collector current in the high current density region over 1 × 104A/cm2with no emitter crowding effect nor Kirk effect. The limitation on fTin fabricated devices is found to be caused mainly by the emitter series resistance.
Keywords :
Bipolar transistors; Current density; Cutoff frequency; Epitaxial layers; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Kirk field collapse effect; Molecular beam epitaxial growth; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.25892
