Title :
Vertical FET´s in GaAs
Author :
Rav-Noy, Z. ; Schreter, U. ; Mukai, S. ; Kapon, E. ; Smith, J.S. ; Chiu, L.C. ; Margalit, S. ; Yariv, A.
Author_Institution :
California Institute of Technology, Pasadena, CA
fDate :
7/1/1984 12:00:00 AM
Abstract :
Vertical FET´s in GaAlAs material systems have been fabricated. The present structure makes possible extremely short (less than 1000-Å) channel devices which are beyond the reach of optical lithographic processes. Devices with transconductance gmas high as 280 mS/mm have been obtained.
Keywords :
Electrons; Gallium arsenide; Graphics; Heterojunctions; Microwave FETs; Molecular beam epitaxial growth; Optical materials; Optical saturation; Silicon; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.25899
