An empirical fit to minority hole mobilities

Minority hole mobilities in highly-doped n-type silicon are determined by electron-beam-induced current measurements. They are used in conjunction with existing data taken from the literature to derive an empirical expression for the minority hole moblility as a function of majority-carrier density 10¹⁴cm^-3≤ ND≤ cm^-3. It is anticipated that this empirical fit will be valuable in device modeling.