DocumentCode
1096760
Title
Study of the effective grain boundary recombination velocity under different injection levels
Author
De Pauw, P. ; Mertens, R. ; Van Overstraeten, R. ; Leuven, K.U.
Author_Institution
MIETEC, Antwerpen, Belgium
Volume
5
Issue
7
fYear
1984
fDate
7/1/1984 12:00:00 AM
Firstpage
234
Lastpage
237
Abstract
The recombination activity of a grain boundary, is usually expressed by an effective recombination velocity seff defined at the grain boundary depletion layer edge. While theory shows that seff decreases with increasing injection levels, experiments however could not clearly confirm this theoretical expectation. In this letter a new method to measure seff as a function of the injection level is proposed. Using this method, strong direct experimental evidence for a decreasing seff with the injection level is given.
Keywords
Conductivity; Current measurement; Grain boundaries; Helium; Integrated circuit measurements; Laboratories; Photovoltaic cells; Silicon; Space charge; Spontaneous emission;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1984.25901
Filename
1484277
Link To Document