Title :
The SIT Saturation protected bipolar transistor
Author :
Wilamowski, B.M. ; Mattson, R.H. ; Staszak, Z.J.
Author_Institution :
University of Arizona, Tucson, AZ
fDate :
7/1/1984 12:00:00 AM
Abstract :
A novel concept for a transistor was invented, introducing an idea for protection against saturation. It involves the use of a static induction transistor (SIT). Simulation showed encouraging switching times when compared to similar gates without protection, while the charge storage was practically eliminated.
Keywords :
Bipolar transistors; Circuit simulation; Diffusion processes; P-n junctions; Propagation delay; Protection; Pulse inverters; Semiconductor process modeling; Very large scale integration; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.25912
