DocumentCode :
1096872
Title :
Photoresponse characteristics of thin-film nickel-nickel oxide-nickel tunneling junctions
Author :
Marshalek, Robert G. ; Davidson, Frederic M.
Author_Institution :
John Hopkins Univ., Baltimore, MD, USA
Volume :
19
Issue :
4
fYear :
1983
fDate :
4/1/1983 12:00:00 AM
Firstpage :
743
Lastpage :
754
Abstract :
Photoinduced tunneling currents in thin-film Ni-NiO-Ni tunneling junctions were measured as a function of photon energy over the range 2.0 eV 
eV. The photoresponse mechanism was found to be consistent with a photon assisted tunneling mechanism. Inelastic electron-electron collisions were found to strongly influence the photoassisted tunneling currents.
eV. The photoresponse mechanism was found to be consistent with a photon assisted tunneling mechanism. Inelastic electron-electron collisions were found to strongly influence the photoassisted tunneling currents.Keywords :
Bibliographies; MIM devices; Nickel materials/devices; Optical radiation effects; Thin-film devices; Tunnel devices/effects; Diodes; Electrons; Energy measurement; Frequency; Insulation; MIM devices; Nonlinear optics; Potential energy; Transistors; Tunneling;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1983.1071914
Filename :
1071914
Link To Document :
