• DocumentCode
    1097005
  • Title

    Synthetic nonlinear semiconductors

  • Author

    Gurnick, M.K. ; DeTemple, T.A.

  • Author_Institution
    Electro-Physics Laboratory, Department of Electrical Engineering, University of Illinois Industrial Affliates
  • Volume
    19
  • Issue
    5
  • fYear
    1983
  • fDate
    5/1/1983 12:00:00 AM
  • Firstpage
    791
  • Lastpage
    794
  • Abstract
    Second-order optical nonlinearities associated with intra-subband transitions in AlxGa1-xAS heterostructure exhibiting the quantum size effect are considered and shown to be large under conditions of degenerate doping and nonsymmetric compositional grading. Nonlinearities of between 10-100 times larger than in bulk GaAs seem feasible.
  • Keywords
    Aluminum materials/devices; Gallium materials/devices; Optical propagation in nonlinear media; Semiconductor growth; Atomic measurements; Energy measurement; Frequency measurement; Gallium arsenide; Infrared detectors; Nonlinear optics; Optical harmonic generation; Optical pumping; Semiconductor device doping; Size measurement;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1983.1071927
  • Filename
    1071927
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1097005