Title :
Shallow boron junctions implanted in silicon through a surface oxide
Author :
Liu, T.M. ; Oldham, W.G. ; Oldham, W.G.
Author_Institution :
Electronic Research Laboratory, Berkeley, CA
fDate :
8/1/1984 12:00:00 AM
Abstract :
The partial-ion-channeling tail in the atomic distribution profile of low-energy boron implants into
Keywords :
Amorphous materials; Annealing; Boron; CMOS technology; Implants; Ion beams; Shadow mapping; Silicon; Substrates; Tail;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.25924
