• DocumentCode
    1097025
  • Title

    On physical models for gate oxide breakdown

  • Author

    Holland, S. ; Chen, I.C. ; Ma, T.P. ; Hu, C.

  • Author_Institution
    University of California, Berkeley, CA
  • Volume
    5
  • Issue
    8
  • fYear
    1984
  • fDate
    8/1/1984 12:00:00 AM
  • Firstpage
    302
  • Lastpage
    305
  • Abstract
    Electrical breakdown of thin (32-nm) SiO2films subjected to constant-current stressing is studied. By studying the effects of reversing the polarity of the constant-current bias and the effects of thermal annealing on the charge-to-breakdown it is determined that electrical breakdown of SiO2is not caused by the widely-cited accumulation of trapped electrons. Rather it is caused by the buildup of positive charges near the cathode at localized areas. The positive charges are not mobile ions but exhibit many characteristics of trapped holes. We conclude that electrical breakdown in SiO2is caused by the accumulation of holes, generated by impact ionization in the oxide.
  • Keywords
    Annealing; Anodes; Breakdown voltage; Cathodes; Dielectric breakdown; Electric breakdown; Electron traps; Impact ionization; Impurities; Stress measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25925
  • Filename
    1484301
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1097025