Title :
Very low threshold InGaAsP mesa laser
Author :
Chen, T.R. ; Chiu, L.C. ; Yu, K.L. ; Koren, U. ; Hasson, A. ; Margalit, S. ; Yariv, A.
Author_Institution :
California Inst. of Technology, CA, USA
fDate :
5/1/1983 12:00:00 AM
Abstract :
Very low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated surface have been fabricated on semi-insulating (SI) InP substrates. Fabrication of the lasers involves a single-step liquid phase epitaxial (LPE) growth and a simple etching process. Lasers operating in the fundamental transverse mode with threshold currents as low as 6.3 mA (for a cavity length of 250 μm) have been obtained. Comparison between the unpassivated lasers and those passivated using the mass transport technique is described.
Keywords :
Gallium materials/lasers; Indium materials/devices; Degradation; Etching; Indium phosphide; Laser modes; Leakage current; Radiative recombination; Semiconductor lasers; Substrates; Surface emitting lasers; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1983.1071930
