Title :
An 800-MHz insulated gate buried-channel CCD on InP
Author :
Lile, D.L. ; Collins, D.A.
Author_Institution :
Colorado State University, Fort Collins, CO
fDate :
8/1/1984 12:00:00 AM
Abstract :
Buried-channel insulated gate CCD´s have been fabricated on semi-insulating InP using a planar ion-implantation process. These 10- µm gate-length devices, exercised with sinusoidal clocks, have operated to a measurement-limited upper frequency of 800 MHz.
Keywords :
Charge coupled devices; Charge transfer; Clocks; Dielectric materials; Frequency measurement; Gallium arsenide; Indium phosphide; Insulation; Neodymium; Sea measurements;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.25936
