• DocumentCode
    1097144
  • Title

    An 800-MHz insulated gate buried-channel CCD on InP

  • Author

    Lile, D.L. ; Collins, D.A.

  • Author_Institution
    Colorado State University, Fort Collins, CO
  • Volume
    5
  • Issue
    8
  • fYear
    1984
  • fDate
    8/1/1984 12:00:00 AM
  • Firstpage
    335
  • Lastpage
    337
  • Abstract
    Buried-channel insulated gate CCD´s have been fabricated on semi-insulating InP using a planar ion-implantation process. These 10- µm gate-length devices, exercised with sinusoidal clocks, have operated to a measurement-limited upper frequency of 800 MHz.
  • Keywords
    Charge coupled devices; Charge transfer; Clocks; Dielectric materials; Frequency measurement; Gallium arsenide; Indium phosphide; Insulation; Neodymium; Sea measurements;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25936
  • Filename
    1484312
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1097144