DocumentCode :
1097155
Title :
Electrothermal failure safety of TIL GTO thyristors
Author :
Silard, A.P.
Author_Institution :
Polytechnic Institute, Bucharest, Romania
Volume :
5
Issue :
8
fYear :
1984
fDate :
8/1/1984 12:00:00 AM
Firstpage :
338
Lastpage :
341
Abstract :
The work presents the main dynamic characteristics testifying to the built-in electrothermal failure-safe features of 4 × 4 mm area TO-220-packed two-interdigitation-level (TIL) GTO thyristors. It is shown that 1) a fairly good and stable current balance between the interdigitated fingers is preserved during both the turn-off and turn-on; 2) the temperature rise in the structure of TIL GTO´s is kept within safe limits under high-voltage/high-current conditions; 3) the final dimensions of the anode current crowding zone are large enough thus limiting the density of power dissipated during transient turn-off. Thanks to these self-protective features, the developed TIL GTO´s possess the highest value of the peak interruptable anode current IATO(60 A) ever reported in the open literature for this class of GTO´s (identical device area and case) and could safely operate at high commutation frequencies under heavy load conditions.
Keywords :
Anodes; Electrothermal effects; Fingers; Frequency; Helium; Proximity effect; Safety; Temperature; Testing; Thyristors;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1984.25937
Filename :
1484313
Link To Document :
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