Title :
Multi-100 GbE and 400 GbE Interfaces for Intra-Data Center Networks Based on Arrayed Transceivers With Serial 100 Gb/s Operation
Author :
Groumas, Panos ; Katopodis, Vasilis ; Jung Han Choi ; Bach, Heinz-Gunter ; Dupuy, Jean-Yves ; Konczykowska, Agnieszka ; Ziyang Zhang ; Harati, Parisa ; Miller, Eric ; Beretta, Antonio ; Gounaridis, Lefteris ; Jorge, Filipe ; Nodjiadjim, Virginie ; Dede, A
Author_Institution :
Nat. Tech. Univ. of Athens, Athens, Greece
Abstract :
We demonstrate a 2 × 100 Gb/s transmitter and a 4 × 100 Gb/s receiver as the key components for multi-100-GbE and 400-GbE optical interfaces in future intradata center networks. Compared to other approaches, the two devices can provide significant advantages in terms of number of components, simplicity, footprint, and cost, as they are capable of serial operation with nonreturn-to-zero on-off keying format directly at 100 Gb/s. The transmitter is based on the monolithic integration of a multimode interference coupler with two Mach-Zehnder modulators on an electro-optic polymer chip, and the hybrid integration of this chip with an InP laser diode and two multiplexing and driving circuits. The receiver on the other hand is based on the hybrid integration of a quad array of InP photodiodes with two demultiplexing circuits. Combining the two devices, we evaluate their transmission performance over standard single-mode fibers without dispersion compensation and achieve a BER of 10-10 after 1000 m and a BER below 10-8 after 1625 m at 2 × 80 Gb/s, as well as a BER below 10-7 after 1000 m at 2 × 100 Gb/s. Future plans including the development of tunable 100 GbE interfaces for optical circuit-switched domains inside data center networks are also discussed.
Keywords :
III-V semiconductors; computer centres; demultiplexing; indium compounds; integrated optics; multiplexing; optical couplers; optical fibre communication; optical modulation; optical polymers; optical transceivers; photodiodes; semiconductor lasers; 400 GbE interfaces; BER; InP; Mach-Zehnder modulators; arrayed transceivers; bit rate 100 Gbit/s to 400 Gbit/s; demultiplexing circuits; distance 1000 m; driving circuits; electro-optic polymer chip; intra-data center networks; laser diode; monolithic integration; multi100 GbE interfaces; multimode interference coupler; multiplexing circuits; photodiodes; receiver; transmitter; Electrooptical waveguides; Indium phosphide; Optical fibers; Optical transmitters; Photodiodes; Polymers; Receivers; 100 GbE interfaces; 400 GbE interfaces; InP photodiodes; data centers; high-speed electronics; high-speed receivers; high-speed transmitters; hybrid integration; modulators; optical interconnects; optical polymers; photonic integration;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2014.2363107