• DocumentCode
    109723
  • Title

    Time-of-Flight Measurements on TlBr Detectors

  • Author

    Suzuki, K. ; Shorohov, M. ; Sawada, T. ; Seto, S.

  • Author_Institution
    Hokkaido Univ. of Sci. (exHokkaido Inst. of Technol.), Sapporo, Japan
  • Volume
    62
  • Issue
    2
  • fYear
    2015
  • fDate
    Apr-15
  • Firstpage
    433
  • Lastpage
    436
  • Abstract
    Carrier transport properties of TlBr crystals grown using the Bridgman method were investigated by the time-of-flight technique. The electron and hole mobilities were measured as 20 - 27 cm2 /Vs and 1.0 - 2.0 cm2/Vs respectively at room temperature. The temperature dependence of the electron mobility increases with decreasing temperature as approximated by a well-known empirical formula reflecting the reciprocal of the LO-phonon density.
  • Keywords
    carrier mobility; crystal growth from melt; electron-phonon interactions; semiconductor counters; thallium compounds; time of flight spectroscopy; Bridgman method; LO-phonon density; TlBr crystals; TlBr detectors; carrier transport properties; electron mobility temperature dependence; hole mobility; tme of flight measurements; Charge carrier processes; Crystals; Current measurement; Detectors; Temperature dependence; Temperature measurement; Voltage measurement; Gamma-ray detector; TlBr; mobility; time-of-flight;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2015.2403279
  • Filename
    7063972
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=109723