DocumentCode :
1097251
Title :
Comparison of band-to-band Auger processes in InGaAsP
Author :
Sugimura, Akira
Author_Institution :
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo, Japan
Volume :
19
Issue :
6
fYear :
1983
fDate :
6/1/1983 12:00:00 AM
Firstpage :
930
Lastpage :
932
Abstract :
The relation between different types of band-to-band Auger processes in InGaAsP is studied. According to a nonparabolic band model that makes use of 
perturbation theory, the Auger effect involving the excited split-off band (CHSH process) is dominant. The Auger effect involving the excited light hole band (CHLH process) is far less than the effect of the CHSH process or the Auger effect involving the excited conduction band (CHCC process). A simple parabolic band model overestimates the CHCC process by about one order of magnitude, and the CHLH process by more than ten orders of magnitude.
perturbation theory, the Auger effect involving the excited split-off band (CHSH process) is dominant. The Auger effect involving the excited light hole band (CHLH process) is far less than the effect of the CHSH process or the Auger effect involving the excited conduction band (CHCC process). A simple parabolic band model overestimates the CHCC process by about one order of magnitude, and the CHLH process by more than ten orders of magnitude.Keywords :
Gallium materials/devices; Gallium materials/lasers; Light-emitting diodes (LED´s); Effective mass; Equations; Kinetic theory; Laser excitation; Laser modes; Laser theory; Power generation; Power lasers; Temperature dependence; Threshold current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1983.1071953
Filename :
1071953
Link To Document :
