• DocumentCode
    1097255
  • Title

    Monte Carlo simulation of AlGaAs/GaAs heterojunction bipolar transistors

  • Author

    Tomizawa, K. ; Awano, Y. ; Hashizume, N.

  • Author_Institution
    Electrotechnical Laboratory, Ibaraki, Japan
  • Volume
    5
  • Issue
    9
  • fYear
    1984
  • fDate
    9/1/1984 12:00:00 AM
  • Firstpage
    362
  • Lastpage
    364
  • Abstract
    A first demonstration of one-dimensional Monte Carlo simulations of AlGaAs/GaAs heterojunction bipolar transistors is reported. The electron motion is solved by a particle model, while the hole motion is solved by a conventional hydrodynamic model. It is shown that the compositional grading of AlxGa1-xAs in the base region is effective to cause the ballistic acceleration of electrons in the base region, resulting in a high collector current density of above 1 mA/µm2. The current-gain cutoff frequency fT reaches 150 GHz if the size of a transistor is properly designed. Also shown is the relation between the device performances and the electron dynamics investigated.
  • Keywords
    Acceleration; Charge carrier processes; Composite materials; Current density; Electron mobility; Gallium arsenide; Heterojunction bipolar transistors; Hydrodynamics; Monte Carlo methods; Poisson equations;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25947
  • Filename
    1484323
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1097255