• DocumentCode
    1097273
  • Title

    Absorption, emission, and gain spectra of 1.3 µm InGaAsP quaternary lasers

  • Author

    Henry, Charles H. ; Logan, Ralph A. ; Temkin, H. ; Merritt, F. Ralph

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, NJ, USA
  • Volume
    19
  • Issue
    6
  • fYear
    1983
  • fDate
    6/1/1983 12:00:00 AM
  • Firstpage
    941
  • Lastpage
    946
  • Abstract
    The spontaneous emission spectrum of mesa lasers was analyzed to determine the absorption and gain spectra at threshold. The radiative current density at threshold was found to be 4.4 kA cm-2μm-1, which is 60 percent of the total current density for the lowest threshold mesa laser. The increase in radiative lifetime due to reabsorption of emitted radiation was calculated to be 1.5, using file measured absorption and emission spectra. Contrary to other studies, our investigation of an LED and 3 lasers of different types yielded no evidence of carrier heating.
  • Keywords
    Gallium materials/lasers; Indium materials/devices; Light-emitting diodes (LED´s); Spontaneous emission; Absorption; Current density; DH-HEMTs; Heating; Laser modes; Pump lasers; Shape measurement; Spontaneous emission; Temperature; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1983.1071955
  • Filename
    1071955