Title :
Absorption, emission, and gain spectra of 1.3 µm InGaAsP quaternary lasers
Author :
Henry, Charles H. ; Logan, Ralph A. ; Temkin, H. ; Merritt, F. Ralph
Author_Institution :
AT&T Bell Laboratories, Murray Hill, NJ, USA
fDate :
6/1/1983 12:00:00 AM
Abstract :
The spontaneous emission spectrum of mesa lasers was analyzed to determine the absorption and gain spectra at threshold. The radiative current density at threshold was found to be 4.4 kA cm-2μm-1, which is 60 percent of the total current density for the lowest threshold mesa laser. The increase in radiative lifetime due to reabsorption of emitted radiation was calculated to be 1.5, using file measured absorption and emission spectra. Contrary to other studies, our investigation of an LED and 3 lasers of different types yielded no evidence of carrier heating.
Keywords :
Gallium materials/lasers; Indium materials/devices; Light-emitting diodes (LED´s); Spontaneous emission; Absorption; Current density; DH-HEMTs; Heating; Laser modes; Pump lasers; Shape measurement; Spontaneous emission; Temperature; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1983.1071955