DocumentCode
1097273
Title
Absorption, emission, and gain spectra of 1.3 µm InGaAsP quaternary lasers
Author
Henry, Charles H. ; Logan, Ralph A. ; Temkin, H. ; Merritt, F. Ralph
Author_Institution
AT&T Bell Laboratories, Murray Hill, NJ, USA
Volume
19
Issue
6
fYear
1983
fDate
6/1/1983 12:00:00 AM
Firstpage
941
Lastpage
946
Abstract
The spontaneous emission spectrum of mesa lasers was analyzed to determine the absorption and gain spectra at threshold. The radiative current density at threshold was found to be 4.4 kA cm-2μm-1, which is 60 percent of the total current density for the lowest threshold mesa laser. The increase in radiative lifetime due to reabsorption of emitted radiation was calculated to be 1.5, using file measured absorption and emission spectra. Contrary to other studies, our investigation of an LED and 3 lasers of different types yielded no evidence of carrier heating.
Keywords
Gallium materials/lasers; Indium materials/devices; Light-emitting diodes (LED´s); Spontaneous emission; Absorption; Current density; DH-HEMTs; Heating; Laser modes; Pump lasers; Shape measurement; Spontaneous emission; Temperature; Threshold current;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1983.1071955
Filename
1071955
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