DocumentCode :
1097273
Title :
Absorption, emission, and gain spectra of 1.3 µm InGaAsP quaternary lasers
Author :
Henry, Charles H. ; Logan, Ralph A. ; Temkin, H. ; Merritt, F. Ralph
Author_Institution :
AT&T Bell Laboratories, Murray Hill, NJ, USA
Volume :
19
Issue :
6
fYear :
1983
fDate :
6/1/1983 12:00:00 AM
Firstpage :
941
Lastpage :
946
Abstract :
The spontaneous emission spectrum of mesa lasers was analyzed to determine the absorption and gain spectra at threshold. The radiative current density at threshold was found to be 4.4 kA cm-2μm-1, which is 60 percent of the total current density for the lowest threshold mesa laser. The increase in radiative lifetime due to reabsorption of emitted radiation was calculated to be 1.5, using file measured absorption and emission spectra. Contrary to other studies, our investigation of an LED and 3 lasers of different types yielded no evidence of carrier heating.
Keywords :
Gallium materials/lasers; Indium materials/devices; Light-emitting diodes (LED´s); Spontaneous emission; Absorption; Current density; DH-HEMTs; Heating; Laser modes; Pump lasers; Shape measurement; Spontaneous emission; Temperature; Threshold current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1983.1071955
Filename :
1071955
Link To Document :
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