• DocumentCode
    1097289
  • Title

    Fabrication of Mo-gate/Ti—silicide-clad-moat MOS Devices by use of multilayer-glass depositions

  • Author

    McDavid, J.M.

  • Author_Institution
    Texas Instruments Incorporated, Dallas, TX
  • Volume
    5
  • Issue
    9
  • fYear
    1984
  • fDate
    9/1/1984 12:00:00 AM
  • Firstpage
    374
  • Lastpage
    375
  • Abstract
    A novel technique is described which uses undoped and doped glass depositions at the gate level to make a molybdenum-metal-gate process compatible with a direct-react titanium-silicide clad-moat process. The method is applicable to submeter micro design-rule MOS IC devices and yields 0.3 Ω and 2.0 Ω for gate and moat levels, respectively.
  • Keywords
    Encapsulation; Fabrication; Glass; Inorganic materials; MOS devices; Plasma temperature; Silicides; Silicon; Titanium; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25951
  • Filename
    1484327
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1097289