Title :
Fabrication of Mo-gate/Ti—silicide-clad-moat MOS Devices by use of multilayer-glass depositions
Author_Institution :
Texas Instruments Incorporated, Dallas, TX
fDate :
9/1/1984 12:00:00 AM
Abstract :
A novel technique is described which uses undoped and doped glass depositions at the gate level to make a molybdenum-metal-gate process compatible with a direct-react titanium-silicide clad-moat process. The method is applicable to submeter micro design-rule MOS IC devices and yields 0.3 Ω and 2.0 Ω for gate and moat levels, respectively.
Keywords :
Encapsulation; Fabrication; Glass; Inorganic materials; MOS devices; Plasma temperature; Silicides; Silicon; Titanium; Very large scale integration;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.25951
