Neutron degradation of the I-V characteristics of AlGaAs/GaAs modulation-doped field-effect transistors

Author

Krantz, Richard J. ; Bloss, Walter L. ; O´Loughlin, Michael J.

Author_Institution

Aerosp. Corp., Los Angeles, CA, USA

Volume

38

Issue

2

fYear

1991

fDate

4/1/1991 12:00:00 AM

Firstpage

858

Lastpage

860

Abstract

AlGaAs/GaAs MODFETs have been neutron-irradiated to fluences approaching 10¹⁵ cm^-2. The source-drain current and the transconductance degrade about 30% over this range of fluences. The source-drain resistance increases by 60% and the end resistance increases by 30% at fluences near 10¹⁵ cm^-2. A triangular-well one-subband depletion layer model which applies over the range of I-V characteristics from subthreshold to saturation has been developed. The model has been extended to describe neutron degradation of source-drain current and transconductance. Both the source-drain current and the transconductance exhibit a nonlinear dependence on neutron fluence, which is reflected in the theoretical results

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; neutron effects; AlGaAs-GaAs; I-V characteristics; MODFETs; end resistance; model; neutron degradation; source-drain current; source-drain resistance; transconductance; triangular-well one-subband depletion layer model; Degradation; Doping; Epitaxial layers; FETs; Gallium arsenide; HEMTs; MODFETs; Neutrons; Transconductance; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.289400

Filename

289400