DocumentCode :
1097377
Title :
Avalanche InP/InGaAs heterojunction phototransistor
Author :
Campbell, Joe C. ; Dentai, Andrew ; Qua, Gin-Jong ; Ferguson, John F.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Volume :
19
Issue :
6
fYear :
1983
fDate :
6/1/1983 12:00:00 AM
Firstpage :
1134
Lastpage :
1138
Abstract :
We report on the characteristics of an avalanche InP/InGaAs heterojunction phototransistor. Below the turnover voltage, the gain is bias dependent and avalanching can be used to achieve significant ( 
) improvement in the gain-bandwidth product. The noise current in this bias region has been measured and is shown to be predominantly shot noise of the photocurrent and the leakage current. Above the turnover voltage, negative resistance is observed and extremely high gains (>104) are achieved. In this mode, the pulse response is a narrow spike (rise time ≃ 20 ns) whose width is independent of the width of the incident optical pulse.
) improvement in the gain-bandwidth product. The noise current in this bias region has been measured and is shown to be predominantly shot noise of the photocurrent and the leakage current. Above the turnover voltage, negative resistance is observed and extremely high gains (>104) are achieved. In this mode, the pulse response is a narrow spike (rise time ≃ 20 ns) whose width is independent of the width of the incident optical pulse.Keywords :
Avalanche transistors; Gallium materials/lasers; Indium materials/devices; Phototransistors; Current measurement; Electrical resistance measurement; Heterojunctions; Indium gallium arsenide; Indium phosphide; Noise measurement; Optical pulses; Photoconductivity; Phototransistors; Voltage;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1983.1071966
Filename :
1071966
Link To Document :
