DocumentCode
1097377
Title
Avalanche InP/InGaAs heterojunction phototransistor
Author
Campbell, Joe C. ; Dentai, Andrew ; Qua, Gin-Jong ; Ferguson, John F.
Author_Institution
AT&T Bell Labs., Holmdel, NJ, USA
Volume
19
Issue
6
fYear
1983
fDate
6/1/1983 12:00:00 AM
Firstpage
1134
Lastpage
1138
Abstract
We report on the characteristics of an avalanche InP/InGaAs heterojunction phototransistor. Below the turnover voltage, the gain is bias dependent and avalanching can be used to achieve significant ( 
) improvement in the gain-bandwidth product. The noise current in this bias region has been measured and is shown to be predominantly shot noise of the photocurrent and the leakage current. Above the turnover voltage, negative resistance is observed and extremely high gains (>104) are achieved. In this mode, the pulse response is a narrow spike (rise time ≃ 20 ns) whose width is independent of the width of the incident optical pulse.
) improvement in the gain-bandwidth product. The noise current in this bias region has been measured and is shown to be predominantly shot noise of the photocurrent and the leakage current. Above the turnover voltage, negative resistance is observed and extremely high gains (>104) are achieved. In this mode, the pulse response is a narrow spike (rise time ≃ 20 ns) whose width is independent of the width of the incident optical pulse.Keywords
Avalanche transistors; Gallium materials/lasers; Indium materials/devices; Phototransistors; Current measurement; Electrical resistance measurement; Heterojunctions; Indium gallium arsenide; Indium phosphide; Noise measurement; Optical pulses; Photoconductivity; Phototransistors; Voltage;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1983.1071966
Filename
1071966
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