• DocumentCode
    1097403
  • Title

    Injected carrier effects on modal properties of 1.55 µm GaInAsP lasers

  • Author

    Bouley, Jean-Claude ; Charil, Josette ; Sorel, Yvon ; Chaminant, Guy

  • Author_Institution
    Centre National d´´Etudes des Telecomm., Bagneux, France
  • Volume
    19
  • Issue
    6
  • fYear
    1983
  • fDate
    6/1/1983 12:00:00 AM
  • Firstpage
    969
  • Lastpage
    974
  • Abstract
    We report the observation of a strong variation of the active layer refractive index with the current in a 1.55 μm "gain-guiding" GaInAsP laser 12 μm wide. A negative refractive index change of several 10-2has been found between the center and the edge of the stripe from a transverse mode distribution analysis and a study of the wavelength shift of the longitudinal modes with the current. We have shown that this effect can explain the increase of threshold current of a gain-guiding laser for a small stripe width. We have observed, moreover, a time dependence of the transverse mode width in the transient regime in pulsed operation and a broadening of a time average spectrum of a stabilized single longitudinal mode laser under current modulation. We have also shown that these two last effects can be explained by the refraction index current dependence.
  • Keywords
    Gallium materials/lasers; Indium materials/devices; Laser modes; Optical refraction; Free electron lasers; Geometrical optics; Laser modes; Optical refraction; Plasma measurements; Pulse modulation; Pulse width modulation; Refractive index; Semiconductor lasers; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1983.1071969
  • Filename
    1071969