DocumentCode
1097403
Title
Injected carrier effects on modal properties of 1.55 µm GaInAsP lasers
Author
Bouley, Jean-Claude ; Charil, Josette ; Sorel, Yvon ; Chaminant, Guy
Author_Institution
Centre National d´´Etudes des Telecomm., Bagneux, France
Volume
19
Issue
6
fYear
1983
fDate
6/1/1983 12:00:00 AM
Firstpage
969
Lastpage
974
Abstract
We report the observation of a strong variation of the active layer refractive index with the current in a 1.55 μm "gain-guiding" GaInAsP laser 12 μm wide. A negative refractive index change of several 10-2has been found between the center and the edge of the stripe from a transverse mode distribution analysis and a study of the wavelength shift of the longitudinal modes with the current. We have shown that this effect can explain the increase of threshold current of a gain-guiding laser for a small stripe width. We have observed, moreover, a time dependence of the transverse mode width in the transient regime in pulsed operation and a broadening of a time average spectrum of a stabilized single longitudinal mode laser under current modulation. We have also shown that these two last effects can be explained by the refraction index current dependence.
Keywords
Gallium materials/lasers; Indium materials/devices; Laser modes; Optical refraction; Free electron lasers; Geometrical optics; Laser modes; Optical refraction; Plasma measurements; Pulse modulation; Pulse width modulation; Refractive index; Semiconductor lasers; Threshold current;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1983.1071969
Filename
1071969
Link To Document