Title :
A high-gain GaAs amplifier with an AGC Function
Author :
Imai, Y. ; Kato, N. ; Ohwada, K. ; Sugeta, T.
Author_Institution :
Nippon Telegraph Telephone Public Corporation, Kanagawa, Japan
fDate :
10/1/1984 12:00:00 AM
Abstract :
A high-gain amplifier consisting of three GaAs monolithic IC chips, a preamplifier, an automatic gain control (AGC) amplifier, and a postamplifier, is developed. The fabricated low-noise low-VSWR amplifier has a 45-dB gain, a 13-dB AGC range, and a 1.6-GHz bandwidth with a power consumption of 2.5 W. It is a promising candidate for use in high-speed data rate transmission systems.
Keywords :
Bandwidth; Energy consumption; FETs; Gain control; Gallium arsenide; Integrated circuit noise; Low-noise amplifiers; Noise figure; Preamplifiers; Resistors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.25968
