DocumentCode :
1097472
Title :
Spectral characteristics of gain-guided semiconductor lasers
Author :
Arnold, Gunther ; Petermann, Klaus ; Schlosser, Ewald
Author_Institution :
AEG-Telefunken, Forschungsinstitut Ulm, Ulm, Germany
Volume :
19
Issue :
6
fYear :
1983
fDate :
6/1/1983 12:00:00 AM
Firstpage :
974
Lastpage :
980
Abstract :
A relation for the spectral width of the envelope of lasing emission of gain-guided lasers is derived which contains only parameters that can be easily measured, such as near and far field, gain width, and facet reflectivity. For GaAlAs 
-groove lasers, one typically obtains for the spectral width 
, in relation to the astigmatism factor 
, a 
Å at 5 mW optical power, while GaInAsP -groove lasers at 1.3 μm exhibit a 
Å.
-groove lasers, one typically obtains for the spectral width , in relation to the astigmatism factor , a Å at 5 mW optical power, while GaInAsP -groove lasers at 1.3 μm exhibit a Å.Keywords :
Aluminum materials/devices; Gallium materials/lasers; Indium materials/devices; Equations; Gain measurement; Laser modes; Laser theory; Nonlinear optics; Optical refraction; Optical variables control; Semiconductor lasers; Stimulated emission; Vision defects;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1983.1071976
Filename :
1071976
Link To Document :
