• DocumentCode
    1097506
  • Title

    New technique for measurement of electron saturation velocity in GaAs MESFET´s

  • Author

    Lee, K.W. ; Shur, M.S. ; Vu, T.T.

  • Author_Institution
    University of Minnesota, Minneapolis, MN
  • Volume
    5
  • Issue
    10
  • fYear
    1984
  • fDate
    10/1/1984 12:00:00 AM
  • Firstpage
    426
  • Lastpage
    427
  • Abstract
    A new technique for the measurement of the electron saturation velocity in GaAs FET\´s is proposed using the "end" resistance measurement. The measurements performed on 1.3-µm gate-length ion-implanted GaAs MESFET\´s lead to the values of the saturation velocity ranging from 1 to 1.3 × 105m/s.
  • Keywords
    Electrical resistance measurement; Electron mobility; Gallium arsenide; MESFETs; Microelectronics; Ohmic contacts; Proximity effect; Thermal factors; Velocity measurement; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25972
  • Filename
    1484348
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1097506