Title :
New technique for measurement of electron saturation velocity in GaAs MESFET´s
Author :
Lee, K.W. ; Shur, M.S. ; Vu, T.T.
Author_Institution :
University of Minnesota, Minneapolis, MN
fDate :
10/1/1984 12:00:00 AM
Abstract :
A new technique for the measurement of the electron saturation velocity in GaAs FET\´s is proposed using the "end" resistance measurement. The measurements performed on 1.3-µm gate-length ion-implanted GaAs MESFET\´s lead to the values of the saturation velocity ranging from 1 to 1.3 × 105m/s.
Keywords :
Electrical resistance measurement; Electron mobility; Gallium arsenide; MESFETs; Microelectronics; Ohmic contacts; Proximity effect; Thermal factors; Velocity measurement; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.25972
