Title :
Theoretical investigation of n+-n-n+Ga0.47In0.53As TEO´s up to the millimeter-wave range
Author :
Friscourt, M.R. ; Rolland, P.A. ; Fauquembergue, R.
Author_Institution :
Université des Sciences et Techniques de Lille I, Villeneuve d´´Ascq Cedex, France
fDate :
11/1/1984 12:00:00 AM
Abstract :
Theoretical investigations of n+-n-n+Ga0.47In0.53As TED´s have been performed up to the millimeter-wave range. Accumulation layer transit time mode of oscillation has been pointed out up to about 50 GHz. n+-n-n+GaInAs devices exhibit higher output power and efficiency in the 30-GHz region than GaAs and InP similar devices, but their frequency behavior is poor because of their higher energy relaxation time.
Keywords :
Acoustic scattering; Anodes; Charge carrier density; Effective mass; Gallium arsenide; Indium phosphide; Millimeter wave technology; Optical scattering; Steady-state; Temperature;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.25978
