Title :
Trench-isolated transistors in lateral CVD epitaxial silicon-on-insulator films
Author :
Kamins, T.I. ; Bradbury, D.R.
Author_Institution :
Hewlett-Packard Laboratories, Palo Alto, CA
fDate :
11/1/1984 12:00:00 AM
Abstract :
Completely dielectrically isolated, p-channel MOS transistors have been obtained by lateral chemical vapor deposition (CVD) epitaxial overgrowth of buried oxide layers and subsequent lateral isolation with refilled trenches. The transistor characteristics are similar to those in bulk control wafers. Isolation between the device island and the substrate is approximately 1012Ω.
Keywords :
Chemical vapor deposition; Dielectric films; Dielectric substrates; Integrated circuit technology; Integrated circuit yield; Isolation technology; Semiconductor films; Silicon compounds; Silicon on insulator technology; Temperature;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.25983
