• DocumentCode
    1097618
  • Title

    Trench-isolated transistors in lateral CVD epitaxial silicon-on-insulator films

  • Author

    Kamins, T.I. ; Bradbury, D.R.

  • Author_Institution
    Hewlett-Packard Laboratories, Palo Alto, CA
  • Volume
    5
  • Issue
    11
  • fYear
    1984
  • fDate
    11/1/1984 12:00:00 AM
  • Firstpage
    449
  • Lastpage
    451
  • Abstract
    Completely dielectrically isolated, p-channel MOS transistors have been obtained by lateral chemical vapor deposition (CVD) epitaxial overgrowth of buried oxide layers and subsequent lateral isolation with refilled trenches. The transistor characteristics are similar to those in bulk control wafers. Isolation between the device island and the substrate is approximately 1012Ω.
  • Keywords
    Chemical vapor deposition; Dielectric films; Dielectric substrates; Integrated circuit technology; Integrated circuit yield; Isolation technology; Semiconductor films; Silicon compounds; Silicon on insulator technology; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1984.25983
  • Filename
    1484359
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1097618