Hot-electron velocity characteristics at AlGaAs/GaAs heterostructures

Two dimensional electron gas velocity characteristics under stationary and nonstationary conditions at a modulation-doped AlGaAs/GaAs heterostructures are investigated based on Monte Carlo simulation. In contrast to three-dimensional electron gas, a steeper increase in velocity is expected for two-dimensional electron gas closely dependent on the low-field high mobility. These calculations suggest that the high mobility can be effectively utilized in a high-speed logic application of such heterostructure devices.