DocumentCode :
1097697
Title :
A GaAs distributed IMPATT diode amplifier
Author :
Bayraktaroglu, B. ; Shih, H.D.
Author_Institution :
Texas Instruments, Inc., Dallas, TX
Volume :
5
Issue :
11
fYear :
1984
fDate :
11/1/1984 12:00:00 AM
Firstpage :
466
Lastpage :
467
Abstract :
Stable microwave amplification has been obtained in GaAs distributed IMPATT (DIMPATT) diodes by the use of shorter than resonant length devices and appropriate input/output port terminations. CW output powers of 2 W were achieved at 9.5 GHz with 10-dB gain.
Keywords :
Diodes; Distributed amplifiers; Equivalent circuits; Frequency; Gallium arsenide; Impedance; Operational amplifiers; Optical reflection; Pulse amplifiers; Resonance;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1984.25990
Filename :
1484366
Link To Document :
بازگشت