• DocumentCode
    1097714
  • Title

    GaInAsP/InP surface emitting injection lasers with short cavity length

  • Author

    Soda, Haruhisa ; Motegi, Yoshihiro ; Iga, Kenichi

  • Author_Institution
    Fijitsu Lab., Ltd., Atsugi, Japan
  • Volume
    19
  • Issue
    6
  • fYear
    1983
  • fDate
    6/1/1983 12:00:00 AM
  • Firstpage
    1035
  • Lastpage
    1041
  • Abstract
    We have succeeded in making a surface emitting (SE) GaInAsP/InP injection laser with short cavity length (= 10 μm) which operates at 1.22 μm of wavelength with threshold current of 160 mA at 77 K. No side emitting mode was observed as a result of preparing long absorbing regions and a small dot electrode (20 μm φ). Only one longitudinal SE mode dominated up to 1.7 times the threshold and the far-field radiation angle was sharp ( 2\\Delta \\theta \\approx 10\\deg ). Fabrication processes and lasing condition are detailed.
  • Keywords
    Gallium materials/lasers; Indium materials/devices; Laser resonators; Charge carrier density; Current density; Electrodes; Indium phosphide; Laser modes; Optical device fabrication; Optical surface waves; Surface emitting lasers; Surface waves; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1983.1072000
  • Filename
    1072000
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1097714