Title :
Circuit modeling of the effect of diffusion on damping in a narrow-stripe semiconductor laser
Author :
Tucker, Rodney S. ; Pope, David J.
Author_Institution :
University of Queensland, St. Lucia, Queensland, Austrailia
fDate :
7/1/1983 12:00:00 AM
Abstract :
This paper describes a circuit modeling technique for directly modulated narrow-stripe semiconductor lasers with strong carrier confinement and index guiding. It is shown that diffusion damping of the modulation response, due to a nonuniform electron density distribution in the active layer, can be accounted for in terms of an equivalent optical gain saturation. Based on this equivalence, a small-signal ac circuit model of a narrow-stripe laser is derived. The model can be used to determine the intensity modulation and frequency modulation response characteristics of a packaged device.
Keywords :
Optical modulation/demodulation; Semiconductor lasers; Carrier confinement; Circuits; Damping; Electron optics; Frequency modulation; Intensity modulation; Laser modes; Optical modulation; Optical saturation; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1983.1072005