Title :
Hot-electron trapping activation energy in PMOSFET´s under mechanical stress
Author :
Hamada, Akemi ; Takeda, Eiji
Author_Institution :
Central Res. Lab., Hitachi Ltd, Tokyo, Japan
Abstract :
Mechanical stress-induced change in hot-electron trapping activation energy (E/sub a/) was observed in PMOSFET´s for the first time. E/sub a/ was found to continuously decrease from 80 meV to 44 meV under compressive mechanical stress (/spl verbar//spl sigma//spl verbar/<100 MPa). From the detrapping behavior after hot-electron injection, E/sub a/ is determined by an Arrhenius plot. The new finding thus indicates that the Si-H or Si-SiO/sub 2/ interface dangling bonds are distorted by mechanical stress, resulting in E/sub a/ lowering.<>
Keywords :
electron traps; hot carriers; insulated gate field effect transistors; interface electron states; semiconductor-insulator boundaries; stress effects; 44 to 80 meV; Arrhenius plot; PMOSFETs; Si-H dangling bonds; Si-SiO/sub 2/; Si-SiO/sub 2/ interface dangling bonds; compressive mechanical stress; detrapping behavior; hot-electron injection; hot-electron trapping activation energy; mechanical stress-induced change; Compressive stress; Degradation; Electron traps; Fabrication; Hot carriers; MOSFET circuits; Secondary generated hot electron injection; Strain measurement; Stress measurement; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
