Recessed-channel structure for fabricating ultrathin SOI MOSFET with low series resistance

Author

Chan, Mansun ; Assaderaghi, Fariborz ; Parke, Stephen A. ; Hu, Chenming ; Ko, Ping K.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

15

Issue

1

fYear

1994

Firstpage

22

Lastpage

24

Abstract

A new recessed-channel SOI (RCSOI) technology has been developed for fabricating ultrathin SOI MOSFET´s with low source/drain series resistance. Thin-film fully depleted SOI MOSFET´s with channel film thickness of 72 nm have been fabricated with the RCSOI technology. The new structure demonstrated a 70% reduction in source/drain series resistance compared with conventional processes. In the deep-submicron region, more than 80% improvement in saturation drain current and transconductance over conventional devices was achieved using the RCSOI technology. The new technology would also facilitate the use of silicide for further reducing the series resistance.<>

Keywords

MOS integrated circuits; insulated gate field effect transistors; integrated circuit technology; semiconductor-insulator boundaries; silicon; thin film transistors; 72 nm; RCSOI technology; Si-SiO/sub 2/; deep-submicron region; low series resistance; recessed-channel structure; saturation drain current; silicide; source/drain series resistance; transconductance; ultrathin SOI MOSFET; Fabrication; Implants; Integrated circuit technology; Isolation technology; MOSFET circuits; Semiconductor films; Silicides; Silicon on insulator technology; Thermal resistance; Transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.289474

Filename

289474