DocumentCode
1097853
Title
Investigations on Photon Energy Response of RadFET Using Monte Carlo Simulations
Author
Beck, Peter ; Bock, Florian ; Böck, Helmuth ; Latocha, Marcin ; Price, Robert A. ; Rollet, Sofia ; Wind, Michael
Author_Institution
ARC Seibersdorf Res., Seibersdorf, Austria
Volume
54
Issue
4
fYear
2007
Firstpage
1151
Lastpage
1157
Abstract
We describe investigations of RadFET energy response simulated with Geant4 and FLUKA2005 Monte Carlo codes. An analysis of energy deposition is carried out for photon irradiation with energies between 35 keV and 2 MeV. The absorbed dose in the silicon dioxide layer (few hundred nanometers) is compared for both transport codes.
Keywords
Monte Carlo methods; field effect transistors; radiation effects; FLUKA2005; Geant4; Monte Carlo simulations; RadFET; energy deposition; photon energy response; photon irradiation; silicon dioxide layer; Computational modeling; Dosimetry; Educational institutions; Geometry; Ionizing radiation; Monte Carlo methods; Radiation detectors; Silicon compounds; Solid modeling; Testing; Basic mechanism; RadFET; dosimetry; energy deposition; radiation detectors; radiation transport; simulation;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2007.902350
Filename
4291686
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