DocumentCode
1097861
Title
GaInP/GaAs double heterojunction bipolar transistor with high fT, fmax, and breakdown voltage
Author
Jong-In Song ; Caneau, C. ; Kyung-Bae Chough ; Hong, W.-P.
Author_Institution
Bellcore, Red Bank, NJ, USA
Volume
15
Issue
1
fYear
1994
Firstpage
10
Lastpage
12
Abstract
We report on the dc and microwave performance of an MOCVD-grown carbon-doped GaInP/GaAs double heterojunction bipolar transistor (DHBT) with a thin highly doped n-type GaInP layer in the collector. The DHBT showed improved current-voltage characteristics at low collector-emitter bias compared with those of a DHBT without the heavily doped GaInP layer, while maintaining a high breakdown voltage (BV/sub CEO//spl sim/20 V). Small area, self-aligned emitter transistors with two 2×5 μm2 emitter fingers were fabricated and exhibited fT and fmax of 53 GHz and 75 GHz, respectively. These results indicate the promise of carbon-doped base GaInP/GaAs DHBT´s for high-power microwave applications.
Keywords
III-V semiconductors; carbon; gallium arsenide; gallium compounds; heavily doped semiconductors; heterojunction bipolar transistors; indium compounds; power transistors; solid-state microwave devices; 53 GHz; 75 GHz; DC performance; GaInP/GaAs double heterojunction bipolar transistor; GaInP:C-GaAs; MOCVD growth; breakdown voltage; current-voltage characteristics; cutoff frequency; high-power microwave applications; highly doped n-type GaInP layer; low collector-emitter bias; maximum frequency of oscillation; microwave performance; self-aligned emitter transistors; Bipolar transistors; Breakdown voltage; Double heterojunction bipolar transistors; Electric breakdown; Etching; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Microwave transistors; Ohmic contacts;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.289478
Filename
289478
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