Title :
Improved prediction of interface-trap generation in NMOST´s
Author :
Woltjer, R. ; Paulzen, G.M.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
Hot-carrier-induced interface-trap generation in NMOSFET´s is a serious reliability hazard for CMOS circuits. Its prediction has been either inaccurate or it needed many process dependent fitting parameters. We introduce a new method that improves lifetime prediction by orders of magnitude. Our method requires no additional fitting parameter and is applicable in existing circuit simulators. From the (time dependent) voltages and currents, available in a circuit simulator, we predict the number of generated interface traps. Our prediction method has been checked in more than a hundred experiments on NMOSFET´s with 0.2-2.0-μm length, 0.8-10-μm width, and 5.5-25-nm oxide thickness.
Keywords :
circuit analysis computing; electron traps; hole traps; hot carriers; insulated gate field effect transistors; interface electron states; semiconductor device models; 0.2 to 10 micron; 5.5 to 25 nm; CMOS circuits; NMOSTs; circuit simulators; hot-carrier-induced trap generation; interface trap generation; lifetime prediction; prediction method; reliability hazard; Aging; Circuit simulation; Degradation; Electron traps; Hot carriers; Integrated circuit reliability; MOSFET circuits; Prediction methods; Predictive models; Voltage;
Journal_Title :
Electron Device Letters, IEEE
