Author :
Boutillier, M.. ; Gauthier-Lafaye, O. ; Bonnefont, S.. ; Lozes-Dupuy, F. ; Lombez, L.. ; Lagarde, D. ; Marie, X. ; Vermersch, F.-J.. ; Calligaro, M.. ; Lecomte, M.. ; Parillaud, O.. ; Krakowski, M. ; Gilard, O.
Abstract :
852-nm emitting Al-free laser diodes and layers constituting the device are irradiated with 1-MeV electrons at fluences ranging from 1014 up to 1016e-/cm2. Layers corresponding to the laser diodes materials were characterised using photoluminescence and time resolved photoluminescence. Laser diodes L-I-V characteristics were measured in pulsed and continuous regime.
Keywords :
electron beam effects; photoluminescence; semiconductor lasers; Al-free laser diodes; L-I-V characteristics; electron irradiation effects; time resolved photoluminescence; wavelength 852 nm; Diode lasers; Electron emission; Gallium arsenide; Laser modes; Optical materials; Photoluminescence; Pulse measurements; Quantum well lasers; Semiconductor lasers; Substrates; Electron radiation effects; optoelectronic devices; semiconductor lasers;
