• DocumentCode
    1097903
  • Title

    Electron Irradiation Effects on Al-Free Laser Diodes Emitting at 852 nm

  • Author

    Boutillier, M.. ; Gauthier-Lafaye, O. ; Bonnefont, S.. ; Lozes-Dupuy, F. ; Lombez, L.. ; Lagarde, D. ; Marie, X. ; Vermersch, F.-J.. ; Calligaro, M.. ; Lecomte, M.. ; Parillaud, O.. ; Krakowski, M. ; Gilard, O.

  • Author_Institution
    CNRS, Toulouse
  • Volume
    54
  • Issue
    4
  • fYear
    2007
  • Firstpage
    1110
  • Lastpage
    1114
  • Abstract
    852-nm emitting Al-free laser diodes and layers constituting the device are irradiated with 1-MeV electrons at fluences ranging from 1014 up to 1016e-/cm2. Layers corresponding to the laser diodes materials were characterised using photoluminescence and time resolved photoluminescence. Laser diodes L-I-V characteristics were measured in pulsed and continuous regime.
  • Keywords
    electron beam effects; photoluminescence; semiconductor lasers; Al-free laser diodes; L-I-V characteristics; electron irradiation effects; time resolved photoluminescence; wavelength 852 nm; Diode lasers; Electron emission; Gallium arsenide; Laser modes; Optical materials; Photoluminescence; Pulse measurements; Quantum well lasers; Semiconductor lasers; Substrates; Electron radiation effects; optoelectronic devices; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2007.894715
  • Filename
    4291692
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1097903