DocumentCode :
1097981
Title :
A study of optical amplification in a double heterostructure GaAs device using the density matrix approach
Author :
Tavis, Michael T.
Author_Institution :
Electronics Research Laboratory, Laboraty Operations, The Aerospace Corporation, El SEgundo, CA, USA
Volume :
19
Issue :
8
fYear :
1983
fDate :
8/1/1983 12:00:00 AM
Firstpage :
1302
Lastpage :
1311
Abstract :
A theoretical investigation of traveling wave light amplification in a GaAs double heterostructure device is presented in this paper. The analysis is self-consistent, semiclassical, and uses a density matrix formulation. Phenomenological constants are included to account for intraband relaxation processes, pumping, and spontaneous emission. The analysis is significantly different from previous rate equation approaches in that saturation effects are inherent in the results and phase information, important for coherent applications, is retained. Results presented for steady-state and pulsed operation include gain, pulse compression, multipulse effects, and the phase variation that occurs over the pulse time.
Keywords :
Gallium materials/devices; Optical pulse amplifiers; Traveling wave amplifiers; Charge carrier processes; Equations; Gallium arsenide; Laser theory; Optical amplifiers; Optical resonators; Pulse amplifiers; Pulse compression methods; Semiconductor lasers; Stimulated emission;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1983.1072024
Filename :
1072024
Link To Document :
بازگشت