• DocumentCode
    1097981
  • Title

    A study of optical amplification in a double heterostructure GaAs device using the density matrix approach

  • Author

    Tavis, Michael T.

  • Author_Institution
    Electronics Research Laboratory, Laboraty Operations, The Aerospace Corporation, El SEgundo, CA, USA
  • Volume
    19
  • Issue
    8
  • fYear
    1983
  • fDate
    8/1/1983 12:00:00 AM
  • Firstpage
    1302
  • Lastpage
    1311
  • Abstract
    A theoretical investigation of traveling wave light amplification in a GaAs double heterostructure device is presented in this paper. The analysis is self-consistent, semiclassical, and uses a density matrix formulation. Phenomenological constants are included to account for intraband relaxation processes, pumping, and spontaneous emission. The analysis is significantly different from previous rate equation approaches in that saturation effects are inherent in the results and phase information, important for coherent applications, is retained. Results presented for steady-state and pulsed operation include gain, pulse compression, multipulse effects, and the phase variation that occurs over the pulse time.
  • Keywords
    Gallium materials/devices; Optical pulse amplifiers; Traveling wave amplifiers; Charge carrier processes; Equations; Gallium arsenide; Laser theory; Optical amplifiers; Optical resonators; Pulse amplifiers; Pulse compression methods; Semiconductor lasers; Stimulated emission;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1983.1072024
  • Filename
    1072024