Title :
Monolithic integration of a metal—semiconductor—metal photodiode and a GaAs preamplifier
Author :
Ito, M. ; Wada, O. ; Nakai, K. ; Sakurai, T.
Author_Institution :
Fujitsu Laboratories, Ltd., Atsugi, Kanagawa, Japan
fDate :
12/1/1984 12:00:00 AM
Abstract :
A metal-semiconductor-metal (MSM) photodiode and a preamplifier have been monolithically integrated on a GaAs substrate by a very simple fabrication process. Measurements have shown that the constituent MSM photodiode has a sensitivity of 2.2 A/W and a -3-dB cutoff frequency of as high as 1 GHz. The present photodiode has been found to realize an extremely high photosensitivity of the monolithically integrated circuit, 26 mV/µW.
Keywords :
Buffer layers; Electrodes; FETs; Fabrication; Gallium arsenide; Monolithic integrated circuits; P-i-n diodes; Photodiodes; Preamplifiers; Schottky diodes;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.26014
