A novel heterojunction bipolar transistor active feedback design

Author

Kobayashi, K.W. ; Oki, A.K. ; Tran, L.T. ; Velebir, J.R. ; Streit, D.C.

Author_Institution

Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

Volume

4

Issue

5

fYear

1994

fDate

5/1/1994 12:00:00 AM

Firstpage

146

Lastpage

148

Abstract

This paper reports on the results of a novel active feedback amplifier design using heterojunction bipolar transistors. The design incorporates positive feedback to increase the gain bandwidth response by as much as 50 %. The active feedback amplifier achieves a gain of 13.8 dB and a 3-dB bandwidth of 15.6 GHz. The active feedback is economical in size in comparison to a spiral inductor implementation. In addition, the active feedback network includes a means for electronically tuning the active feedback circuit in order to adjust the bandwidth response. A two-stage design achieves a tuneable bandwidth from 4-10 GHz with a fixed gain of 20 dB. The tuneability that this design offers is a convenient means for recovering from gain and bandwidth degradation due to process variation and fixture parasitics.<>

Keywords

MMIC; bipolar integrated circuits; feedback; heterojunction bipolar transistors; microwave amplifiers; tuning; wideband amplifiers; 13.8 dB; 15.6 GHz; 4 to 10 GHz; HBT amplifier; InAlAs-InGaAs; MMIC; SHF; active feedback design; electronic tuning; feedback amplifier design; gain bandwidth response; heterojunction bipolar transistor; positive feedback; tunable bandwidth; two-stage design; Active inductors; Bandwidth; Circuit optimization; Degradation; Feedback amplifiers; Feedback circuits; Gain; Heterojunction bipolar transistors; Spirals; Tunable circuits and devices;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.289514

Filename

289514