• DocumentCode
    109804
  • Title

    Observation of second flexural mode enhancement in graphene resonators

  • Author

    Chen, T. ; Mastropaolo, E. ; Bunting, A. ; Cheung, R.

  • Author_Institution
    Scottish Microelectron. Centre, Univ. of Edinburgh, Edinburgh, UK
  • Volume
    51
  • Issue
    13
  • fYear
    2015
  • fDate
    6 25 2015
  • Firstpage
    1014
  • Lastpage
    1016
  • Abstract
    The enhancement of the second flexural mode in a monolayer graphene resonator by an inhomogeneous electrostatic actuation force has been observed. The devices have been fabricated by transferring the graphene onto a poly-Si/SiO2/Si substrate whereby the poly-Si has been released to produce graphene resonators. Enhancement of the second harmonic has been demonstrated by varying the actuation voltage, achieving an amplitude enhancement of up to 95% of the fundamental mode. The reported findings open new perspectives for graphene resonant sensors with enhanced sensitivity.
  • Keywords
    electrostatics; graphene devices; monolayers; resonators; silicon compounds; C; Si-SiO2-Si; actuation voltage; amplitude enhancement; graphene resonant sensors; inhomogeneous electrostatic actuation force; monolayer graphene resonator; polysilicon; second flexural mode enhancement; second harmonic;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2015.0361
  • Filename
    7130846
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=109804