• DocumentCode
    1098053
  • Title

    Outperforming the Conventional Scaling Rules in the Quantum-Capacitance Limit

  • Author

    Knoch, J. ; Riess, W. ; Appenzeller, J.

  • Author_Institution
    IBM Res. GmbH, Ruschlikon
  • Volume
    29
  • Issue
    4
  • fYear
    2008
  • fDate
    4/1/2008 12:00:00 AM
  • Firstpage
    372
  • Lastpage
    374
  • Abstract
    We present a study on the scaling behavior of field- effect transistors in the quantum-capacitance limit (QCL). It will be shown that a significant performance improvement in terms of the power delay product can be obtained in devices scaled toward the QCL. As a result, nanowires or nanotubes exhibiting a 1-D transport are a premier choice as active channel materials for transistor devices since the QCL can be attained in such systems.
  • Keywords
    field effect transistors; nanotubes; nanowires; 1D transport; active channel materials; conventional scaling rules; field-effect transistors; nanotubes; nanowires; power delay product; quantum-capacitance limit; scaling behavior; transistor devices; Gate delay; MOSFET; nanowire/tube; one-dimensional (1-D); quantum capacitance; scaling;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2008.917816
  • Filename
    4470145