• DocumentCode
    1098060
  • Title

    Low-threshold semiconductor Raman laser

  • Author

    Suto, K. ; Nishizawa, J.

  • Author_Institution
    Research Institute of Electrical Communication, Tohoku University, Sendai, Japan
  • Volume
    19
  • Issue
    8
  • fYear
    1983
  • fDate
    8/1/1983 12:00:00 AM
  • Firstpage
    1251
  • Lastpage
    1254
  • Abstract
    A semiconductor Raman laser using the longitudinal optical (LO) phonon mode of GaP has a very low threshold compared to the transverse optical (TO) phonon mode of GaP and even compared to simulated Raman scatterings in various kinds of liquids and insulating solid materials. The lowest threshold value of the pulsed input optical power is 8 kW ( 5 \\times 10^{6} W/cm2) at room temperature. Far infrared radiation (24.8 μm) has been generated by placing both GaP with the LO phonon mode and GaAs with the TO phonon mode in a Fabry-Perot resonator. The maximum far infrared power has been 3 W.
  • Keywords
    Gallium materials/lasers; Infrared generation; Raman lasers; Dielectric liquids; Insulation; Laser modes; Optical resonators; Optical scattering; Phonons; Raman scattering; Semiconductor lasers; Solid lasers; Solid modeling;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1983.1072030
  • Filename
    1072030
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1098060