DocumentCode :
1098060
Title :
Low-threshold semiconductor Raman laser
Author :
Suto, K. ; Nishizawa, J.
Author_Institution :
Research Institute of Electrical Communication, Tohoku University, Sendai, Japan
Volume :
19
Issue :
8
fYear :
1983
fDate :
8/1/1983 12:00:00 AM
Firstpage :
1251
Lastpage :
1254
Abstract :
A semiconductor Raman laser using the longitudinal optical (LO) phonon mode of GaP has a very low threshold compared to the transverse optical (TO) phonon mode of GaP and even compared to simulated Raman scatterings in various kinds of liquids and insulating solid materials. The lowest threshold value of the pulsed input optical power is 8 kW ( 
W/cm2) at room temperature. Far infrared radiation (24.8 μm) has been generated by placing both GaP with the LO phonon mode and GaAs with the TO phonon mode in a Fabry-Perot resonator. The maximum far infrared power has been 3 W.
W/cm2) at room temperature. Far infrared radiation (24.8 μm) has been generated by placing both GaP with the LO phonon mode and GaAs with the TO phonon mode in a Fabry-Perot resonator. The maximum far infrared power has been 3 W.Keywords :
Gallium materials/lasers; Infrared generation; Raman lasers; Dielectric liquids; Insulation; Laser modes; Optical resonators; Optical scattering; Phonons; Raman scattering; Semiconductor lasers; Solid lasers; Solid modeling;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1983.1072030
Filename :
1072030
Link To Document :
