Effect of Random, Discrete Source Dopant Distributions on Nanowire Tunnel FETs

Author

Sylvia, Somaia Sarwat ; Habib, K. M. Masum ; Khayer, M. Abul ; Alam, Khairul ; Neupane, Mahesh ; Lake, Roger K.

Author_Institution

Dept. of Electr. Eng., Univ. of California at Riverside, Riverside, CA, USA

Volume

61

Issue

6

fYear

2014

fDate

Jun-14

Firstpage

2208

Lastpage

2214

Abstract

The finite number, random placement, and discrete nature of the dopants in the source of an InAs nanowire tunnel field-effect transistor affect the drive current and the inverse subthreshold slope. The impact of source scattering is negligible, since the current is limited by the interband tunneling. The most significant effect of the discrete dopants is to create variations of the electric fields in the tunnel barrier, which cause variations in the current. The relative variation in the ON current decreases as the average doping density and/or nanowire diameter increases. Results from full self-consistent nonequilibrium Green´s function calculations and semiclassical calculations are compared.

Keywords

Green´s function methods; III-V semiconductors; field effect transistors; indium compounds; nanowires; semiconductor doping; tunnel transistors; InAs; average doping density; discrete nature; discrete source dopant distributions; drive current; finite number; interband tunneling; inverse subthreshold slope; nanowire tunnel FET; nonequilibrium Greens function calculations; random placement; source scattering; tunnel barrier; Chemicals; Doping; Electric potential; Logic gates; Quantum capacitance; Semiconductor process modeling; Tunneling; Discrete; InAs; doping; field-effect transistor (FET); nanowire; tunneling; tunneling.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2318521

Filename

6812119